TrenchMosfetDiode - Trench mosfet with internal reverse recovery diode

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Connection Diagram:
D
JUNCTION
G
M
S

Connections(39)PositionRemark
S Bottom Source
M Left
JUNCTION Right Thermal connection to the case
G Left Gate
D Top Drain
Parameters(19)DefaultRemark
D_Cj0 1n Junction capacitance
D_BV 1e6 Reverse Breakdown voltage
D_DIFDT 100e6 Reverse Recovery slope of turn off current
D_IF 100 Forward current before Reverse Recovery
D_Is 2e-8 Saturation Current
D_N 1 Emission Coefficient
D_QRR 30n Reverse Recovered Charge
D_Rs 2m Series parasitic resistance of the diode
D_SnapOffTimeconstant 25n Time delay for the reverse recovery current
D_TRR 50n Reverse Recovery Time [s]
D_TT 0 Forward storage time (Transit Time)
M_VGSth[V] 3.6 Gate-source Threshold voltage
M_BVdss 40 Breakdown voltage[V]
M_Rpackage[Ohm] 1m On state Drain-Source Resistance becuase of packaging, lead and epi layers
M_RG 3.2 Internal Gate Resistance [Ohm]
M_KP[A/V2] 46 Transconductance
M_CDS 750pF
M_CGD 250pF
M_CGS 5nF
Function
Status Standard
Select from Components\Library\Semiconductor\Mosfet
See also
MosfetDiode, MosfetLevel0, MosfetModule, MosfetModule4, MosfetMonitor, MosfetSensor, PMOSFETLEVEL0,
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