| D | ||
| G | 
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| M | ||
| S |
PMOSFETLEVEL0 - Level 0 Mosfet P channel |
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| D | ||
| G |
| |
| M | ||
| S |
| Connections(4) | Position | Remark |
| S | Bottom | |
| M | Left | Connect to a .Model database |
| G | Left | |
| D | Top |
| Parameters(9) | Default | Remark |
| VTO[V] | -3 | Threshold voltage of the gate VGS_Threshold |
| RonMosfet | 10m | On state mosfet RDS |
| RoffMosfet | 1e9 | Off state Mosfet resistance |
| BV | 1e6 | BreakDown voltage of hte mosfet and the diode |
| VonDiode | 0.6 | On state diode voltage |
| RonDiode | 10m | On state diode resistance |
| RoffDiode | 1e9 | Off state diode resistance |
| RG | 10 | Mosfet internal gate resistance |
| CGS | 10nF | Mosfet Gate Source capacitance |
| Function | Ideal Mosfet model with inverse diode and gate delay | |
| Special | The Gate is a circuit node. The delay time due to charging CGS is modeled, | |
| Status | Standard | |
| Select from | Components\Library\Semiconductor\Mosfet | |
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