| C | ||
| G | 
| |
| M | ||
| E |
IGBTLEVEL0 - Level 0 IGBT |
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| C | ||
| G |
| |
| M | ||
| E |
| Connections(4) | Position | Remark |
| M | Left | Connect to a .Model database |
| G | Left | |
| E | Bottom | |
| C | Top |
| Parameters(10) | Default | Remark |
| VceOnIGBT | 2 | IGBT on state voltage |
| VTO[V] | 3 | Threshold voltage of the gate VGS_Threshold |
| RonIGBT | 100m | On state IGBT RDS |
| RoffIIGBT | 1e9 | Off state IGBT resistance |
| BV | 1e6 | BreakDown voltage of the IGBT and the diode |
| VonDiode | 0.6 | On state diode voltage |
| RonDiode | 10m | On state diode resistance |
| RoffDiode | 1e9 | Off state diode resistance |
| RG | 10 | Mosfet internal gate resistance |
| CGE | 1nF | Mosfet Gate Source capacitance |
| Function | Ideal IGBT model with inverse diode and gate delay | |
| Special | The Gate is a circuit node. The delay time due to charging CGE is modeled, | |
| Status | Standard | |
| Select from | Components\Library\Semiconductor\IGBT | |
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